IPP086N10N3 G
Manufacturer:
Infineon
Mfr.Part #:
IPP086N10N3 G
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 125 W 100 V Continuous Drain Current (ID):80 A 55 nC
| Parameter | Value |
|---|---|
| Gate Charge | 55 nC |
| Gate to Source Threshold Voltage | 3 V |
| Continuous Drain Current (ID) | 80 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 8.2 mΩ |
| Input capacitance | 3.98 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 125 W |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 189
Distributors
pcbx
pcbxUnit Price$0.82397
Ext.Price$0.82397
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.82397 | $0.82397 |
| 10 | $0.67555 | $6.75550 |
| 25 | $0.62109 | $15.52725 |
| 50 | $0.57101 | $28.55050 |
| 100 | $0.50198 | $50.19800 |
| 300 | $0.47925 | $143.77500 |
| 500 | $0.45755 | $228.77500 |
| 1000 | $0.43466 | $434.66000 |